Ultrahigh Responsivity UV Photodetector Based on Cu Nanostructure/ZnO QD Hybrid Architectures

Strong near‐surface electromagnetic field formed by collective oscillation of electrons on Cu nanostructure a shows a strong dependence on geometry, offering a promising approach to boost the light absorption of ZnO photoactive layers with enhanced plasmon scattering. Here, a facile way to fabricate UV photodetectors with tunable configuration of the self‐assembled Cu nanostructures on ZnO thin films is reported. The incident lights are effectively confined in ZnO photoactive layers with the existence of the uplayer Cu nanostructures, and the interdiffusion of Cu atoms during fabrication of the Cu nanostructures can improve the carrier transfer in ZnO thin films. The optical properties of the hybrid architectures are successfully tailored over a control of the geometric evolution of the Cu nanostructures, resulting in significantly enhanced photocurrent and responsivity of 2.26 mA and 234 A W−1 under a UV light illumination of 0.62 mW cm−2 at 10 V, respectively. The photodetectors also exhibit excellent reproducibility, stability, and UV–visible rejection ratio (R370 nm/R500 nm) of ≈370, offering an approach of high‐performance UV photodetectors for practical applications. Strong near‐surface electromagnetic field formed on Cu nanostructures offers a promising approach to boost the light absorption of ZnO photoactive layers. Here, an ultrahigh responsivity Cu nanostructure/ZnO quantum dot hybrid architecture UV photodetector is achieved by systematically controlling the surface morphology of self‐assembled Cu nanostructures. The internal relation of the morphological evolution of Cu nanostructures and enhanced responsivity is revealed.