Performance Improved Vertical Diamond Schottky Barrier Diode With Fluorination-Termination Structure

We have demonstrated performance improved vertical diamond Schottky barrier diodes (SBDs) with fluorination-terminated (FT) structure. A turn-on voltage of 1.6 V, an on-resistance of 50.2 \text{m}\Omega \cdot cm 2 , a breakdown voltage of 117 V, and a breakdown field of 3.3 MV/cm are achieved for the SBD with an FT length of 20~\mu \text{m} . We verified that the SBD with FT structure could obtain lower turn-on voltage and larger breakdown field compared to that of the SBD without FT structure. The results show that the SBDs with FT structure have significant potential for future high-performance power electronics application.