Effect of Tungsten Doping on the Properties of In2O3 Films

Highly crystalline tungsten oxide (WO 3 )-doped indium oxide (In 2 O 3 ) films are synthesized at room temperature by the RF magnetron sputtering technique. The structural and morphological properties of the as-deposited films and the films annealed at a temperature of 300°C are investigated in detail. X-ray diffraction analysis reveals the presence of a cubic bixbyite structure with preferred orientation along the (222) plane for both the as-deposited and annealed films. Moderate WO 3 doping (1 wt.%) enhances the crystallinity of the as-deposited In 2 O 3 films, whereas the crystallinity of the films systematically decreases with an increase in WO 3 doping concentration beyond 1 wt.%. Raman spectral analysis discloses the modes of the cubic bixbyite In 2 O 3 phase in the films. Atomic force microscopy micrographs show a smooth and dense distribution of smaller grains in the films. X-ray photoelectron spectroscopy reveals the existence of W 5+ in the doped films. The undoped film is highly oxygen deficient. Variation in the concentration of oxygen vacancy can be associated with the degree of crystallinity of the films.