Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs
This work addresses the electrical behaviour of high-voltage (HV) SiC MOSFETs, being the main motivation to check their robustness. Large area (25 mm2) devices rated for 3.3 kV applications were fabricated with a special process for the gate oxide formation. The unit cell was designed to achieve goo...
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| Veröffentlicht in: | Materials science forum 2019-07, Vol.963, p.768-772 |
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| creator | Knoll, Lars Bianda, Enea Kranz, Lukas Banu, Viorel Soler, Victor Mihaila, Andrei Cabello, Maria Montserrat, Josep Godignon, Philippe Rebollo, Jose |
| description | This work addresses the electrical behaviour of high-voltage (HV) SiC MOSFETs, being the main motivation to check their robustness. Large area (25 mm2) devices rated for 3.3 kV applications were fabricated with a special process for the gate oxide formation. The unit cell was designed to achieve good short-circuit performance. Static and dynamic characterization is presented at room and high temperature. Output curves and 3rd quadrant behaviour were analysed. Dynamic tests were performed at high bus voltages and high current. To check device robustness, short-circuit and power cycling’s were considered. Robustness test results put in evidence the achievement of reasonable good results obtained due to a suitable cell design. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.963.768 |
| format | Article |
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Large area (25 mm2) devices rated for 3.3 kV applications were fabricated with a special process for the gate oxide formation. The unit cell was designed to achieve good short-circuit performance. Static and dynamic characterization is presented at room and high temperature. Output curves and 3rd quadrant behaviour were analysed. Dynamic tests were performed at high bus voltages and high current. To check device robustness, short-circuit and power cycling’s were considered. Robustness test results put in evidence the achievement of reasonable good results obtained due to a suitable cell design.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.963.768</identifier><language>eng</language><publisher>Pfaffikon: Trans Tech Publications Ltd</publisher><subject>Circuit design ; Circuits ; Dynamic tests ; Electric potential ; High temperature ; High voltages ; MOSFETs ; Robustness ; Short circuits ; Unit cell</subject><ispartof>Materials science forum, 2019-07, Vol.963, p.768-772</ispartof><rights>2019 Trans Tech Publications Ltd</rights><rights>Copyright Trans Tech Publications Ltd. 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Robustness test results put in evidence the achievement of reasonable good results obtained due to a suitable cell design.</description><subject>Circuit design</subject><subject>Circuits</subject><subject>Dynamic tests</subject><subject>Electric potential</subject><subject>High temperature</subject><subject>High voltages</subject><subject>MOSFETs</subject><subject>Robustness</subject><subject>Short circuits</subject><subject>Unit cell</subject><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNqNkMFKAzEURYMoWKv_EBDczTTJzGSSjSijtUJLwVa3Ic0kbUqb0SSl1K83UqFbVw8ul3MfB4A7jPISETbY7_d5UFa7aI1VudNxMJkNc06LvKbsDPQwpSTjdUXOQQ-RqsqqsqaX4CqENUIFZpj2wOjp4OTWKtispJcqam-_ZbSdg9K18K1b7EJ0OgQ41yHCzsCRXa7gR7eJcqnhzDZwMp0Nn-fhGlwYuQn65u_2wXuKm1E2nr68No_jTJEas6xVtNaSMCWNYmVRIsxkVWFOyrpFhpW6XfBCc8Vayo0hrOSSm4XWhhukaUuKPrg9cj9997VLT4l1t_MuTQpCKEojlPDUuj-2lO9C8NqIT2-30h8ERuLXnkj2xMmeSPZEsieSPZHsJcDDERC9dCFqtTrt_BPxA46YgRk</recordid><startdate>20190719</startdate><enddate>20190719</enddate><creator>Knoll, Lars</creator><creator>Bianda, Enea</creator><creator>Kranz, Lukas</creator><creator>Banu, Viorel</creator><creator>Soler, Victor</creator><creator>Mihaila, Andrei</creator><creator>Cabello, Maria</creator><creator>Montserrat, Josep</creator><creator>Godignon, Philippe</creator><creator>Rebollo, Jose</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7SR</scope><scope>7XB</scope><scope>88I</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>M2P</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>Q9U</scope><orcidid>https://orcid.org/0000-0001-8341-8549</orcidid></search><sort><creationdate>20190719</creationdate><title>Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs</title><author>Knoll, Lars ; 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| subjects | Circuit design Circuits Dynamic tests Electric potential High temperature High voltages MOSFETs Robustness Short circuits Unit cell |
| title | Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs |
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