Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs

This work addresses the electrical behaviour of high-voltage (HV) SiC MOSFETs, being the main motivation to check their robustness. Large area (25 mm2) devices rated for 3.3 kV applications were fabricated with a special process for the gate oxide formation. The unit cell was designed to achieve good short-circuit performance. Static and dynamic characterization is presented at room and high temperature. Output curves and 3rd quadrant behaviour were analysed. Dynamic tests were performed at high bus voltages and high current. To check device robustness, short-circuit and power cycling’s were considered. Robustness test results put in evidence the achievement of reasonable good results obtained due to a suitable cell design.