Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible

Boron (B) doping sources and crucible materials for stable, reproducible and high concentration B doping in fluorescent SiC (f-SiC) were investigated. When a Ta crucible was used with BN powder as a B doping source were used, B doping did not occur owing to too low C/Si ratio. On the other hand, whe...

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Veröffentlicht in:Materials science forum 2019-07, Vol.963, p.34-37, Article 34
Hauptverfasser: Iwaya, Motoaki, Kamiyama, Satoshi, Takeuchi, Tetsuya, Tanaka, Daiki, Kurokawa, Hiroaki, Akasaki, Isamu
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Sprache:eng
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Zusammenfassung:Boron (B) doping sources and crucible materials for stable, reproducible and high concentration B doping in fluorescent SiC (f-SiC) were investigated. When a Ta crucible was used with BN powder as a B doping source were used, B doping did not occur owing to too low C/Si ratio. On the other hand, when a C crucible and suitable Ta components inside the crucible were used, a high B concentration of 1.58 × 1019 cm-3 was obtained, owing to the high C/Si ratio. The results indicate that a C crucible with optimal Ta components and BN powder are suitable for high concentration B doping.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.963.34