Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates

We present three different ways of transferring 3C-SiC layers grown on silicon on top of a SiC carrier using a carbon glue layer. Our main focus was upon the growth on the transition layer, as 3C-SiC does not feature any polarities in the or direction. We realized a stable and reproducible process...

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Veröffentlicht in:	Materials science forum 2019-07, Vol.963, p.149-152
Hauptverfasser:	La Via, Francesco, Künecke, Ulrike, Monnoye, Sylvain, Zielinski, Marcin, Wellmann, Peter J., Schuh, Philipp, Mauceri, Marco, Litrico, Grazia
Format:	Artikel
Sprache:	eng
Schlagworte:	Organic chemistry Silicon carbide Silicon substrates Thin films Transition layers
Online-Zugang:	Volltext
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