Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates

We present three different ways of transferring 3C-SiC layers grown on silicon on top of a SiC carrier using a carbon glue layer. Our main focus was upon the growth on the transition layer, as 3C-SiC does not feature any polarities in the or direction. We realized a stable and reproducible process by following a wet chemical approach, dealing with the difficulties of handling thin but freestanding 3C-SiC layers. By using this way, we transferred approximately 130 μm thick pieces using their horizontal hot-wall reactor (M10), which were chemo mechanically polished and afterwards fixed on our SiC carriers. Implementing such a seeding stack into our growth setup, we managed to grow between 20 μm and 130 μm thick layers on top. We have proven the possibility to grow on the transition layer. Furthermore, we observed a slight reduction in protrusion density, which is currently one of the main defects in such layers.