Laser Annealing Simulations of Metallisations Deposited on 4H-SiC

Based on finite elements method, thermal simulations were conducted to reproduce a laser annealing of several common metals deposited on 4H-SiC. We estimated the temperature reached at the metal/4H-SiC interface to check the possibility to achieve ohmic contact formation through laser annealing. An...

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Veröffentlicht in:Materials science forum 2019-07, Vol.963, p.502-505, Article 502
Hauptverfasser: Michaud, Jean François, Chouteau, David, Berger, Clément, Alquier, Daniel
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Sprache:eng
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Zusammenfassung:Based on finite elements method, thermal simulations were conducted to reproduce a laser annealing of several common metals deposited on 4H-SiC. We estimated the temperature reached at the metal/4H-SiC interface to check the possibility to achieve ohmic contact formation through laser annealing. An optimization of Al/Ti/4H-SiC stacking was also considered. Simulations highlighted the low temperature of the non-irradiated SiC face that allows using grinded wafer.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.963.502