Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis

Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis

The aim of this paper is to analyze the SiC MOSFETs behavior under short circuit tests (SCT). In particular, the activity is focused on a deep evaluation of short circuit dynamic by dedicated laboratory measurements conducted at different conditions supported and compared by means of a robust physic...

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Veröffentlicht in:Materials science forum 2019-07, Vol.963, p.788-791
Hauptverfasser: Pulvirenti, Mario, Zanetti, Edoardo, Cavallaro, Daniela, Saggio, Mario
Format: Artikel
Sprache:eng
Schlagworte:
Finite element method
Mathematical analysis
MOSFETs
Short circuits
Thermal analysis
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Zusammenfassung:The aim of this paper is to analyze the SiC MOSFETs behavior under short circuit tests (SCT). In particular, the activity is focused on a deep evaluation of short circuit dynamic by dedicated laboratory measurements conducted at different conditions supported and compared by means of a robust physical model developed by Finite Element Approach.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.963.788