Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization

The effective modeling methodology of 4H-SiC trench gate MOSFETs is presented. The potential barrier lowering at the MOS channel region suggested by I-V measurements is implemented to commercial TCAD tool as the net-doping reduction. The proposed model is validated by comparison of TCAD simulations with I-V measurements and SEM image observations.