An Investigation into the Dynamic Behavior of 3.3kV MOSFETs Body Diode

An Investigation into the Dynamic Behavior of 3.3kV MOSFETs Body Diode

This paper presents a dynamic investigation of the body diode behavior of MOSFETs rated for 3.3kV applications. The body diodes of MOSFETs with different cell designs and pitch sizes have been used. The turn-off behavior of the body diode is compared to that of a 3.3kV JBS diode.

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Veröffentlicht in:Materials science forum 2019-07, Vol.963, p.621-624
Hauptverfasser: Canales, Francisco, Kranz, Lukas, Soler, Victor, Alfieri, Giovanni, Badstübner, Uwe, Mihaila, Andrei, Knoll, Lars, Godignon, Philippe, Rahimo, Munaf, Bianda, Enea
Format: Artikel
Sprache:eng
Schlagworte:
Diodes
MOSFETs
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Beschreibung
Zusammenfassung:This paper presents a dynamic investigation of the body diode behavior of MOSFETs rated for 3.3kV applications. The body diodes of MOSFETs with different cell designs and pitch sizes have been used. The turn-off behavior of the body diode is compared to that of a 3.3kV JBS diode.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.963.621