Accurate Dopant and Interface Characterization in Oxidized SiC with Refined Non-Contact C-V Technique
The non-contact C-V technique has been recently gaining interest as a precise, cost and time effective metrology for wide-bandgap semiconductors. Originally focused on dopant measurement, non-contact C-V has been expanding to encompass wide-bandgap surface and interface characterization, including c...
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| Veröffentlicht in: | Materials science forum 2019-07, Vol.963, p.189-193 |
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| creator | Wilson, Marshall Hillard, Robert Almeida, Carlos Savtchouk, Alexandre Marinskiy, Dmitriy Lagowski, Jacek |
| description | The non-contact C-V technique has been recently gaining interest as a precise, cost and time effective metrology for wide-bandgap semiconductors. Originally focused on dopant measurement, non-contact C-V has been expanding to encompass wide-bandgap surface and interface characterization, including complex reliability issues critical for the future of power devices. In this work, we report progress achieved using a new direct method for determining the flatband voltage, VFB, and capacitance, CFB. Experimental results are presented for n-type oxidized epitaxial 4-H SiC. They demonstrate the approach and the unique self-consistent measurement producing an entire set of pertinent electrical parameters, including the interface trap density, Dit. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.963.189 |
| format | Article |
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| subjects | Capacitance-voltage characteristics Dopants Electric contacts Electronic devices Materials science Semiconductors Silicon carbide Wide bandgap semiconductors |
| title | Accurate Dopant and Interface Characterization in Oxidized SiC with Refined Non-Contact C-V Technique |
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