Interfacial reactions of crystalline Ni and amorphous SiC thin films

The initial interfacial reactions of crystalline nickel and amorphous silicon carbide (Ni/ a -SiC) thin films were investigated by means of X-ray diffraction (XRD) analysis, high-resolution transmission electron microscopy [(HR)TEM], Auger electron spectroscopy (AES) and X-ray photoelectron spectros...

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Veröffentlicht in:	Journal of materials science 2018-05, Vol.53 (9), p.6681-6697
Hauptverfasser:	Keita, A.-S., Wang, Z., Sigle, W., Mittemeijer, E. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous materials Amorphous silicon Carbon Characterization and Evaluation of Materials Chemistry and Materials Science Classical Mechanics Crystal structure Crystallinity Crystallography and Scattering Methods Electronic Materials Electrons Interdiffusion Interface reactions Intermetallic compounds Materials Science Nickel Nickel silicide Photoelectrons Polymer Sciences Reaction kinetics Silicon carbide Solid Mechanics Spectrum analysis Thin films Transmission electron microscopy X ray photoelectron spectroscopy X-ray diffraction
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Beschreibung
Zusammenfassung:	The initial interfacial reactions of crystalline nickel and amorphous silicon carbide (Ni/ a -SiC) thin films were investigated by means of X-ray diffraction (XRD) analysis, high-resolution transmission electron microscopy [(HR)TEM], Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). Upon annealing at 500 °C, in the initial stage (
ISSN:	0022-2461 1573-4803
DOI:	10.1007/s10853-018-1986-0