In-situ construction of 2D direct Z-scheme g-C3N4/g-C3N4 homojunction with high photocatalytic activity

Constructing all-solid-state Z-scheme junction is a very effective strategy to design highly active photocatalysts for solar energy conversion and environmental purification. We herein firstly construct 2D g-C 3 N 4 /g-C 3 N 4 Z-scheme homojunction by using a bottom-up approach, during which the sup...

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Veröffentlicht in:Journal of materials science 2018-12, Vol.53 (23), p.15882-15894
Hauptverfasser: Qiao, Qing, Huang, Wei-Qing, Li, Yuan-Yuan, Li, Bo, Hu, Wangyu, Peng, Wei, Fan, Xiaoxing, Huang, Gui-Fang
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Sprache:eng
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Zusammenfassung:Constructing all-solid-state Z-scheme junction is a very effective strategy to design highly active photocatalysts for solar energy conversion and environmental purification. We herein firstly construct 2D g-C 3 N 4 /g-C 3 N 4 Z-scheme homojunction by using a bottom-up approach, during which the supramolecular complex is initially formed, followed by a facile thermal polycondensation. Based on the active species trapping experiments, Mott–Schottky test and band edge position analysis, the prepared 2D nanosheet g-C 3 N 4 /g-C 3 N 4 homojunctions are found to be Z-scheme type, different from those available reported ones with a type-II energy alignment. Benefiting from the specific 2D morphology with large exposed surface area and Z-scheme junction with efficient separation and high redox abilities of the photoinduced electrons and holes, the obtained 2D g-C 3 N 4 /g-C 3 N 4 homojunctions are much more active than the conventional g-C 3 N 4 /g-C 3 N 4 homojunction (CN-MT) and bulk g-C 3 N 4 (CN-M) under visible light irradiation, validating by the high rhodamine degradation rate of 0.833 h − 1 , which is about 3.9 and 15.4 times higher than that of CN-MT (0.214 h − 1 ) and CN-M (0.054 h − 1 ), respectively. The present work sheds light on design of novel Z-scheme photocatalysts with specific morphology and thus further application in the field of environment or energy.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-018-2762-x