Growth of GaN on a three-dimensional SCAATTM bulk seed by tri-halide vapor phase epitaxy using GaCl3

GaN with a film thickness of 200-600 m was grown on the as-grown three-dimensional supercritical acidic ammonia technology (SCAATTM) bulk seed that comprised only semipolar { 10 1 ¯ 1 ¯ } planes at a temperature as high as 1390 °C by tri-halide vapor phase epitaxy; further, the GaN film was also cha...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2019-05, Vol.58 (SC), p.SC1024
Hauptverfasser:	Iso, Kenji, Oozeki, Daisuke, Ohtaki, Syoma, Murakami, Hisashi, Koukitu, Akinori
Format:	Artikel
Sprache:	eng
Schlagworte:	Ammonia Basal plane Carrier density Curvature Film thickness Gallium chloride Stacking faults Vapor phase epitaxy Vapor phases
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