Growth of GaN on a three-dimensional SCAATTM bulk seed by tri-halide vapor phase epitaxy using GaCl3

GaN with a film thickness of 200-600 m was grown on the as-grown three-dimensional supercritical acidic ammonia technology (SCAATTM) bulk seed that comprised only semipolar { 10 1 ¯ 1 ¯ } planes at a temperature as high as 1390 °C by tri-halide vapor phase epitaxy; further, the GaN film was also characterized. The FWHM value of the X-ray rocking curves was ∼40″, which was almost similar to the value of the used seed. The curvature radii were as large as 40-64 m. Further, the carrier concentrations were observed to be as small as 5.1 × 1017-9.1 × 1017 cm−3. However, the basal plane stacking fault densities were observed to be 3.4 × 101-5.4 × 101 cm−1 and were observed to increase during the growth process because of the as-grown SCAATTM seed surface condition.