Influence of barrier inhomogeneities on transport properties of Pt/MoS2 Schottky barrier junction

The electrical transport properties of the Pt/MoS2 Schottky barrier junction have been investigated to explore the effect of lateral barrier inhomogeneities at the interface. The junction with a relatively thin layer (5 nm) of MoS2 exhibits rectifying behavior and changes into Ohmic nature on increa...

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Veröffentlicht in:	Journal of alloys and compounds 2019-08, Vol.797, p.582-588
Hauptverfasser:	Neetika, Kumar, Sandeep, Sanger, Amit, Chourasiya, Hemant K., Kumar, Ashish, Asokan, K., Chandra, Ramesh, Malik, V.K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge transport Electrical junctions Electrical properties Gaussian distribution Inhomogeneity Interface inhomogeneities Molybdenum disulfide Normal distribution Pt/MoS2 Schottky junction Schottky barrier height Temperature dependence Thermionic emission Transport properties
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