Influence of barrier inhomogeneities on transport properties of Pt/MoS2 Schottky barrier junction

The electrical transport properties of the Pt/MoS2 Schottky barrier junction have been investigated to explore the effect of lateral barrier inhomogeneities at the interface. The junction with a relatively thin layer (5 nm) of MoS2 exhibits rectifying behavior and changes into Ohmic nature on increasing the thickness of MoS2. The current-voltage (I–V) measurements on the Schottky barrier junction were performed in the temperature range of 200–350 K. Our detailed analysis of the temperature dependent I–V data shows the presence of a bi-fold charge transport mechanism across the Pt/MoS2 interface. Dipolar fields, present due to inhomogeneities at the interface, modify charge transport in addition to the thermionic emission mechanism attributed conventionally for the Schottky junctions. The model, assuming a Gaussian distribution of barrier heights due to the presence of lateral inhomogeneities, has been used to analyze and explain the temperature dependent I–V data. The effect of lateral inhomogeneities on the electrical properties of the Pt/MoS2 Schottky junction has been studied in a quantitative manner. •Pt/MoS2 Schottky junctions were fabricated using DC magnetron sputtering.•I–V-T characteristics cannot be explained by thermionic emission theory only.•Bi-fold charge transport is responsible for the electrical properties of junction.•Effect of interfacial barrier inhomogeneities on I–V characteristics is quantified.