An accurate model of domain-wall-based spintronic memristor

Spintronic memristors are promising devices that can be used in various applications such as memory chips and neuromorphic systems. The spintronic memristor combines the non-volatility advantage of resistive memristors, and the good scalability, and radiation hardness of spin-transfer torque magnetic devices. In addition, spintronic memristors can benefit from the maturity of integrating magnetic devices on top of CMOS devices. Current models of spintronic memristor only provide a similar version of the linear ion drift model of resistive memristors, which offers a simplified model, but with low accuracy and without enough linking to the device's physical parameters. In this paper, an accurate model of domain-wall- based spintronic memristor based on Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation is proposed. The proposed model provides a more accurate dynamical behavior by using the LLGS equation, and better relation to the device's physical parameters. It also uses the required equations that cover different types and geometries of spintronic memristors. The effect of the thermal fluctuations on device's parameters is also included into the model. The model uses the theory of domain-wall motion to explain the behavior of the device. Furthermore, a Verilog-A model is developed in order be compatible with IC CAD tools. •Current models of spintronic memristor only provide a similar version of the linear ion drift model of solid-state memristors.•In this paper, an accurate model of domain-wall- based spintronic memristor based on Landau-Lifshitz-GilbertSlonczewski (LLGS) equation is proposed.•The proposed model provides a more accurate dynamical behavior by using the LLGS equation, and better relation to the device's physical parameters.•The proposed model uses specific equations to cover different types and geometries of the spintronic memristors under consideration.