Effect of Ti doping on the crystallography, phase, surface/interface structure and optical band gap of Ga2O3 thin films

The effect of titanium (Ti) doping on the crystal structure, phase, surface/interface chemistry, microstructure and optical band gap of gallium oxide (Ga 2 O 3 ) (GTO) films is reported. The Ti content was varied from 0 to ~ 5 at% in co-sputtering, using Ga 2 O 3 ceramic and Ti metal targets, deposi...

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Veröffentlicht in:	Journal of Materials Science 2019-09, Vol.54 (17), p.11526-11537
Hauptverfasser:	Manandhar, Sandeep, Battu, Anil K., Tan, Susheng, Panat, Rahul, Shutthanandan, V., Ramana, C. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Classical Mechanics Crystal structure Crystallography Crystallography and Scattering Methods Dopants Doping Electronic Materials Energy gap Gallium oxides Materials Science Microstructure Morphology Organic chemistry Photoelectrons Polymer Sciences Solid Mechanics Sputtering Thin films Titanium Titanium dioxide X ray photoelectron spectroscopy X-ray diffraction
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