A Robust BBPLL-Based 0.18-[Formula Omitted]m CMOS Resistive Sensor Interface With High Drift Resilience Over a −40 °C–175 °C Temperature Range
This paper presents a drift-resilient time-based resistive sensor interface in a 0.18-[Formula Omitted] CMOS technology. The interface is built around only two oscillators, a phase detector, a digital filter, and a digital-to-analog converter (DAC), resulting in a simple first-order Delt–Sigma desig...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2019-01, Vol.54 (7), p.1862 |
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Sprache: | eng |
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Zusammenfassung: | This paper presents a drift-resilient time-based resistive sensor interface in a 0.18-[Formula Omitted] CMOS technology. The interface is built around only two oscillators, a phase detector, a digital filter, and a digital-to-analog converter (DAC), resulting in a simple first-order Delt–Sigma design with a predictable transfer function. The highly digital approach not only results in a small area but also implies that only a few analog circuits are sensitive to drift. The holistic drift-resilience strategy implemented combines time-based chopping and voltage-controlled oscillator (VCO) tuning to remove the dc and low-frequency errors introduced by VCO nonidealities and drift. These techniques do not introduce a significant area and power overhead. Silicon measurements show that the proposed bang–bang phase-locked loop (BBPLL)-based sensor interface exhibits ppm-level gain drift and offset drift for the entire −40 °C–175 °C temperature range while using a single-temperature calibration scheme and no external accurate references nor components for this drift stability. The interface provides a 15-effective number of bits conversion for a 100-ms conversion time and consumes 3.41 mW of power and occupies only 0.23 mm2 of the active area. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2019.2911888 |