GaAs P-I-N STRUCTURES FOR X-RAY DETECTORS

The characteristics of GaAs p-i-n structures, made by vapor phase epitaxy, were researched. New conditions of epitaxial growth, allowing the production of thick ultra-pure GaAs layers by single process are worked out.

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Bibliographische Detailangaben
Veröffentlicht in:	Nauchno-tekhnicheskiĭ vestnik informat͡s︡ionnykh tekhnologiĭ, mekhaniki i optiki mekhaniki i optiki, 2010-09, Vol.10 (5)
Hauptverfasser:	Zhilyaev, Y, Mikulik, D, Orlova, T, Poletaev, N, Snytkina, S, Fyodorov, L, Panteleev, V
Format:	Artikel
Sprache:	rus
Schlagworte:	Epitaxial growth Vapor phase epitaxy Vapor phases X ray detectors
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The characteristics of GaAs p-i-n structures, made by vapor phase epitaxy, were researched. New conditions of epitaxial growth, allowing the production of thick ultra-pure GaAs layers by single process are worked out.
ISSN:	2226-1494 2500-0373