2D layering of silicon nanocrystals at TiO2/CuI heterojunction for enhanced charge transport
We prepared a two-dimensional layer of silicon nanoparticles at the CuI/TiO2 p-n junction heterophase interface by spray coating of colloidal ink of nanoparticles. The particles are prepared by a physical process of milling at room temperature and further etched to obtain a nanometric size distribut...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 2019-06, Vol.125 (24) |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | We prepared a two-dimensional layer of silicon nanoparticles at the CuI/TiO2 p-n junction heterophase interface by spray coating of colloidal ink of nanoparticles. The particles are prepared by a physical process of milling at room temperature and further etched to obtain a nanometric size distribution with a mode at ∼2 nm. These particles at the interface act as traps for electrons. However, the traps fill up quickly in a diode configuration due to the dense band structure of the nanoparticles, and overflowed electrons can tunnel through the junction, thereby significantly increasing the efficiency as reflected by a large increase in the diode current. A qualitative model is developed in terms of discrete band states at the interface to explain the above phenomena. The results offer opportunities for developing high-performance semiconducting devices. |
---|---|
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.5093958 |