Near-infrared-absorbing Photodetectors Based on Naphtho[1,3,2]oxazaborinine-type Dibenzo-BODIPY Dyes

The steep demand for developing photodetectors with NIR absorption led us to prepare monolayer devices composed of indium tin oxide, NIR dibenzo-BODIPYs with naphtho[1,3,2]oxazaborinines 1 or 2, and Al. When the 1-loaded device was irradiated with 800 nm light at a fluence of 130 µW cm−2, an on-to-off current ratio of 4.44 × 102 was produced at a 1 V bias potential, with a dark current density of 8.49 × 10−9 A cm−2. This excellent light-associated cycle of photocurrent production and non-production warrants further investigation for a high-resolution photodetector in image sensing applications.