Improved Performance of Quantum Dots Light-emitting Diodes: The Case of Au-incorporated NiO Hole Injection Layer

The performance of quantum dots light-emitting diodes (QLEDs) was enhanced by incorporating Au into NiO hole injection layer (HIL). Highly bright green QLEDs, with a maximum luminance of 31210 cd m−2 and a current efficiency of 6.5 cd A−1, exhibit 50% improvement compared with device without Au NP. The improved performance may be attributed to the significant increase in the hole injection rate, which occurs due to the introduction of Au NPs and the good matching between the resonance frequency of the localized surface plasmon resonance (LSPR) generated by Au NPs and QDs, as well as the suppressed Auger recombination of QDs layer due to the LSPR-induced near-field enhanced radiative recombination rate of excitons.