Formation of low resistivity layers on singlecrystalline diamond by excimer laser irradiation

A singlecrystalline diamond (100)(Ib) plate immersed in 2% boric acid was irradiated by 193-nm ArF excimer laser beams for the formation of conductive layers on the surface of an insulating diamond substrate. From current-voltage measurements of the irradiated areas, it was confirmed that semiconducting layers with high conductivities are formed on the diamond surface. It was possible to form ohmic contacts by directly touching tungsten probes with the layer surface. Since Raman spectra exhibited only peaks due to diamond and no peaks due to amorphous carbon, the drastically enhanced conductivity is not attributed to amorphous carbon formation but due to the incorporation of boron atoms into the diamond subsurface from the dopant acid. Secondary ion mass spectrometric depth profile showed the incorporation of boron atoms up to 40 nm depths from the surface. From cathodoluminescence measurements at low temperatures, it was difficult to detect clear peaks for the substitutional incorporation of boron atoms into diamond lattices, which could be attributed to the small thickness of the doped layer for detection. The proposed technique is a new potential method for shallow doping and formation of conductive layers on singlecrystalline diamond surfaces. [Display omitted] •Producing conductive layers on the insulating diamond surface by laser irradiation•Shallow doping of boron into diamond with a distributed concentration profile.•Linear dependence of current-voltage characteristics of surface irradiated areas.•Controlling irradiation conditions can decrease resistivity and activation energy.•Alternative method for the formation of a very shallow junction on diamond surface.