Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy
Single quantum wells in the system Si 1_x Ge x /Si with x < 0.1 are grown by molecular-beam epitaxy in the mode of periodic Ge molecular flow interruption during the formation of the alloy layer. It allowed an increase in the operating current of the source electron gun, which provided a more sta...
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| Veröffentlicht in: | Bulletin of the Lebedev Physics Institute 2019, Vol.46 (1), p.5-8 |
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| container_title | Bulletin of the Lebedev Physics Institute |
| container_volume | 46 |
| creator | Kazakov, I. P. Klekovkin, A. V. Tsvetkov, V. A. Akmaev, M. A. Uvarov, O. V. |
| description | Single quantum wells in the system Si
1_x
Ge
x
/Si with
x
< 0.1 are grown by molecular-beam epitaxy in the mode of periodic Ge molecular flow interruption during the formation of the alloy layer. It allowed an increase in the operating current of the source electron gun, which provided a more stable molecular Ge flow. The grown heterostructures are studied by transmission scanning electron microscopy methods |
| doi_str_mv | 10.3103/S1068335619010020 |
| format | Article |
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1_x
Ge
x
/Si with
x
< 0.1 are grown by molecular-beam epitaxy in the mode of periodic Ge molecular flow interruption during the formation of the alloy layer. It allowed an increase in the operating current of the source electron gun, which provided a more stable molecular Ge flow. The grown heterostructures are studied by transmission scanning electron microscopy methods</description><identifier>ISSN: 1068-3356</identifier><identifier>EISSN: 1934-838X</identifier><identifier>DOI: 10.3103/S1068335619010020</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Electron guns ; Epitaxial growth ; Germanium ; Heterostructures ; Molecular beam epitaxy ; Molecular flow ; Physics ; Physics and Astronomy ; Quantum wells ; Scanning electron microscopy ; Silicon</subject><ispartof>Bulletin of the Lebedev Physics Institute, 2019, Vol.46 (1), p.5-8</ispartof><rights>Allerton Press, Inc. 2019</rights><rights>Copyright Springer Nature B.V. 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c268t-d3d1e9310795835c9856b886e77feb97b7f99e15f356ee1b6428f5ff4ee7b9953</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.3103/S1068335619010020$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.3103/S1068335619010020$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51297</link.rule.ids></links><search><creatorcontrib>Kazakov, I. P.</creatorcontrib><creatorcontrib>Klekovkin, A. V.</creatorcontrib><creatorcontrib>Tsvetkov, V. A.</creatorcontrib><creatorcontrib>Akmaev, M. A.</creatorcontrib><creatorcontrib>Uvarov, O. V.</creatorcontrib><title>Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy</title><title>Bulletin of the Lebedev Physics Institute</title><addtitle>Bull. Lebedev Phys. Inst</addtitle><description>Single quantum wells in the system Si
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Ge
x
/Si with
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< 0.1 are grown by molecular-beam epitaxy in the mode of periodic Ge molecular flow interruption during the formation of the alloy layer. It allowed an increase in the operating current of the source electron gun, which provided a more stable molecular Ge flow. The grown heterostructures are studied by transmission scanning electron microscopy methods</description><subject>Electron guns</subject><subject>Epitaxial growth</subject><subject>Germanium</subject><subject>Heterostructures</subject><subject>Molecular beam epitaxy</subject><subject>Molecular flow</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum wells</subject><subject>Scanning electron microscopy</subject><subject>Silicon</subject><issn>1068-3356</issn><issn>1934-838X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1UEtLw0AQXkTBWv0B3ha86CHpPrqbXfCipY0FRaSK3kKSztbUNKm7CU3_vVsqKIin-Wa-xzCD0DklIaeED2aUSMW5kFQTSggjB6hHNR8Giqu3Q489Hez4Y3Ti3JIQIZQWPfQR23rTvOPa4FkxmBU06WLoPMCXHb7GJKRX-KlNq6Zd4VcoS4ezLX6o522ZNkW1wDH4roTc9xZPynoT4mn4a3QL6QqP10WTdttTdGTS0sHZd-2jl8n4eXQX3D_G09HNfZAzqZpgzucUtL8q0kJxkWslZKaUhCgykOkoi4zWQIXx1wDQTA6ZMsKYIUCUaS14H13sc9e2_mzBNcmybm3lVyaMcSWZ1CzyKrpX5bZ2zoJJ1rZYpXabUJLsfpr8-an3sL3HeW21APuT_L_pC8TNdT0</recordid><startdate>2019</startdate><enddate>2019</enddate><creator>Kazakov, I. P.</creator><creator>Klekovkin, A. V.</creator><creator>Tsvetkov, V. A.</creator><creator>Akmaev, M. A.</creator><creator>Uvarov, O. V.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2019</creationdate><title>Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy</title><author>Kazakov, I. P. ; Klekovkin, A. V. ; Tsvetkov, V. A. ; Akmaev, M. A. ; Uvarov, O. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c268t-d3d1e9310795835c9856b886e77feb97b7f99e15f356ee1b6428f5ff4ee7b9953</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Electron guns</topic><topic>Epitaxial growth</topic><topic>Germanium</topic><topic>Heterostructures</topic><topic>Molecular beam epitaxy</topic><topic>Molecular flow</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum wells</topic><topic>Scanning electron microscopy</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kazakov, I. P.</creatorcontrib><creatorcontrib>Klekovkin, A. V.</creatorcontrib><creatorcontrib>Tsvetkov, V. A.</creatorcontrib><creatorcontrib>Akmaev, M. A.</creatorcontrib><creatorcontrib>Uvarov, O. V.</creatorcontrib><collection>CrossRef</collection><jtitle>Bulletin of the Lebedev Physics Institute</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kazakov, I. P.</au><au>Klekovkin, A. V.</au><au>Tsvetkov, V. A.</au><au>Akmaev, M. A.</au><au>Uvarov, O. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy</atitle><jtitle>Bulletin of the Lebedev Physics Institute</jtitle><stitle>Bull. Lebedev Phys. Inst</stitle><date>2019</date><risdate>2019</risdate><volume>46</volume><issue>1</issue><spage>5</spage><epage>8</epage><pages>5-8</pages><issn>1068-3356</issn><eissn>1934-838X</eissn><abstract>Single quantum wells in the system Si
1_x
Ge
x
/Si with
x
< 0.1 are grown by molecular-beam epitaxy in the mode of periodic Ge molecular flow interruption during the formation of the alloy layer. It allowed an increase in the operating current of the source electron gun, which provided a more stable molecular Ge flow. The grown heterostructures are studied by transmission scanning electron microscopy methods</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.3103/S1068335619010020</doi><tpages>4</tpages></addata></record> |
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| ispartof | Bulletin of the Lebedev Physics Institute, 2019, Vol.46 (1), p.5-8 |
| issn | 1068-3356 1934-838X |
| language | eng |
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| source | Springer Nature - Complete Springer Journals; EZB Electronic Journals Library |
| subjects | Electron guns Epitaxial growth Germanium Heterostructures Molecular beam epitaxy Molecular flow Physics Physics and Astronomy Quantum wells Scanning electron microscopy Silicon |
| title | Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy |
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