Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy

Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy

Single quantum wells in the system Si 1_x Ge x /Si with x < 0.1 are grown by molecular-beam epitaxy in the mode of periodic Ge molecular flow interruption during the formation of the alloy layer. It allowed an increase in the operating current of the source electron gun, which provided a more sta...

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Veröffentlicht in:Bulletin of the Lebedev Physics Institute 2019, Vol.46 (1), p.5-8
Hauptverfasser: Kazakov, I. P., Klekovkin, A. V., Tsvetkov, V. A., Akmaev, M. A., Uvarov, O. V.
Format: Artikel
Sprache:eng
Schlagworte:
Electron guns
Epitaxial growth
Germanium
Heterostructures
Molecular beam epitaxy
Molecular flow
Physics
Physics and Astronomy
Quantum wells
Scanning electron microscopy
Silicon
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Zusammenfassung:Single quantum wells in the system Si 1_x Ge x /Si with x < 0.1 are grown by molecular-beam epitaxy in the mode of periodic Ge molecular flow interruption during the formation of the alloy layer. It allowed an increase in the operating current of the source electron gun, which provided a more stable molecular Ge flow. The grown heterostructures are studied by transmission scanning electron microscopy methods
ISSN:1068-3356
1934-838X
DOI:10.3103/S1068335619010020