Two-step epitaxial growth of NbON (100) thin films on rutile-type TiO2 (101) substrates and reduction of residual carrier concentration by RF reactive sputtering

Two-step epitaxial growth of NbON (100) thin films on rutile-type TiO2 (101) substrates and reduction of residual carrier concentration by RF reactive sputtering

We demonstrate here the epitaxial growth of NbON (100) films on rutile-type TiO2 (101) substrates. By the application of a 2-step growth method, we successfully minimized anion-related defects in the NbON films and reduced the residual carrier concentration by lowering the growth temperature.

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:CrystEngComm 2019, Vol.21 (23), p.3552-3556
Hauptverfasser: Kikuchi, Ryosuke, Nakamura, Toru, Kaneko, Yasushi, Hato, Kazuhito
Format: Artikel
Sprache:eng
Schlagworte:
Carrier density
Epitaxial growth
Rutile
Substrates
Thin films
Titanium dioxide
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We demonstrate here the epitaxial growth of NbON (100) films on rutile-type TiO2 (101) substrates. By the application of a 2-step growth method, we successfully minimized anion-related defects in the NbON films and reduced the residual carrier concentration by lowering the growth temperature.
ISSN:1466-8033
DOI:10.1039/c9ce00478e