Behavior of Some Refractory Hafnium and Tantalum Compounds in Plasma Flows

— By reacting tantalum or hafnium carbide with iridium in the presence of a small amount of silicon, we have prepared refractory hafnium- and tantalum-containing materials consisting of a mixture of phases: the intermetallic compound MIr 3 , recrystallized tantalum or hafnium carbide, and iridium si...

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Veröffentlicht in:Inorganic materials 2019-03, Vol.55 (3), p.231-236
Hauptverfasser: Baklanova, N. I., Lozanov, V. V., Kul’kov, A. A., Antipov, E. A., Titov, A. T.
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Sprache:eng
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Zusammenfassung:— By reacting tantalum or hafnium carbide with iridium in the presence of a small amount of silicon, we have prepared refractory hafnium- and tantalum-containing materials consisting of a mixture of phases: the intermetallic compound MIr 3 , recrystallized tantalum or hafnium carbide, and iridium silicide. We have studied the behavior of the materials during an exposure to a high-speed plasma flow at a sample surface temperature of 2000°C and demonstrated that, owing to their special microstructure, the absence of pores, and the low oxidation rate of the iridium-containing components, they exhibit a good ablation resistance and that the hafnium system withstands a longer exposure.
ISSN:0020-1685
1608-3172
DOI:10.1134/S002016851903004X