Record Open‐Circuit Voltage Wide‐Bandgap Perovskite Solar Cells Utilizing 2D/3D Perovskite Heterostructure

In this work, the authors realize stable and highly efficient wide‐bandgap perovskite solar cells that promise high power conversion efficiencies (PCE) and are likely to play a key role in next generation multi‐junction photovoltaics (PV). This work reports on wide‐bandgap (≈1.72 eV) perovskite sola...

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Veröffentlicht in:Advanced energy materials 2019-06, Vol.9 (21), p.n/a
Hauptverfasser: Gharibzadeh, Saba, Abdollahi Nejand, Bahram, Jakoby, Marius, Abzieher, Tobias, Hauschild, Dirk, Moghadamzadeh, Somayeh, Schwenzer, Jonas A., Brenner, Philipp, Schmager, Raphael, Haghighirad, Amir Abbas, Weinhardt, Lothar, Lemmer, Uli, Richards, Bryce S., Howard, Ian A., Paetzold, Ulrich W.
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Sprache:eng
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Zusammenfassung:In this work, the authors realize stable and highly efficient wide‐bandgap perovskite solar cells that promise high power conversion efficiencies (PCE) and are likely to play a key role in next generation multi‐junction photovoltaics (PV). This work reports on wide‐bandgap (≈1.72 eV) perovskite solar cells exhibiting stable PCEs of up to 19.4% and a remarkably high open‐circuit voltage (VOC) of 1.31 V. The VOC‐to‐bandgap ratio is the highest reported for wide‐bandgap organic−inorganic hybrid perovskite solar cells and the VOC also exceeds 90% of the theoretical maximum, defined by the Shockley–Queisser limit. This advance is based on creating a hybrid 2D/3D perovskite heterostructure. By spin coating n‐butylammonium bromide on the double‐cation perovskite absorber layer, a thin 2D Ruddlesden–Popper perovskite layer of intermediate phases is formed, which mitigates nonradiative recombination in the perovskite absorber layer. As a result, VOC is enhanced by 80 mV. By coating n‐butylammonium bromide on wide‐bandgap double‐cation perovskite absorber layers (EG ≈ 1.72 eV), a thin 2D Ruddlesden–Popper perovskite layer of intermediate phase is formed. The resulting heterostructure mitigates nonradiative recombination and enables a high open‐circuit voltage of up to 1.31 V and stable power output efficiencies of up to 19.4%.
ISSN:1614-6832
1614-6840
DOI:10.1002/aenm.201803699