Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm

I – V characteristics and spectral photosensitivities of photodiodes based on epitaxially grown hydrides of metal-organic compounds (MOC-hydride epitaxy) of epitaxial structures with the In 0.67 Ga 0.33 As absorbing layer doped with Zn on the InP substrates are studied. The photodiodes are fabricated using the mesatechnology. The long-wavelength boundary of the spectral photosensitivity of diodes measured at half-maximum is 2.06 μm at room temperature. Photosensitivity spectra are studied in a temperature interval of 230–300 K.