Auger Depth Profiling Analysis of FeNi/CoFeB/FeNi Specimen Using an Ultra Low Angle Incidence Ion Beam

We investigated the Auger depth profiling analysis for a magnetic head material of FeNi:5 nm/CoFeB:3 nm/FeNi:10 nm by the glancing-angle Ar ion beam sputtering method at an incident angle of 7 degree from the sample surface. In consequence, Ar ion acceleration voltage of 0.5 kV provided a depth profile result with a higher depth resolution, which represented a symmetrical structure of B with sharper interfaces as high as it can be evaluated quantitatively. In additional, Ar ion acceleration voltage of 3.0 kV also provided a similar symmetry structure of B in a shorter acquisition time. However, its depth resolution was lower than 0.5 kV. In contrast, as a result of measuring the same sample by atom probe tomography, one-dimensional concentration profile of B was artificially asymmetrical.