Formation of Nitrogen Oxides by Nanosecond Pulsed Plasma Discharges in Gas–Liquid Reactors
A gas–liquid-film flow reactor with a nanosecond pulsed power supply was utilized to produce nitrogen oxides from Ar/N 2 mixtures (gas phase) and deionized water (liquid phase). Chemical analysis of the stable products found in both the gas and liquid phases was performed and chemical quenching was...
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Veröffentlicht in: | Plasma chemistry and plasma processing 2019-05, Vol.39 (3), p.643-666 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A gas–liquid-film flow reactor with a nanosecond pulsed power supply was utilized to produce nitrogen oxides from Ar/N
2
mixtures (gas phase) and deionized water (liquid phase). Chemical analysis of the stable products found in both the gas and liquid phases was performed and chemical quenching was incorporated for the liquid phase samples in order to eliminate post plasma reactions. Significant amounts of NO and NO
2
in the gas phase and
NO
2
-
and
NO
3
-
in the liquid phase were determined using FTIR spectroscopy and ion chromatography, respectively. The production rate of all nitrogen oxides produced increased significantly with N
2
concentration while H
2
O
2
formation decreased slightly. The gas temperature of the plasma was approximately 525 K and was unaffected by N
2
concentration while the electron density ranged from 1 × 10
17
cm
−3
in pure Ar to 5.5 × 10
17
cm
−3
in 28% N
2
. The role of the
·
OH
in the reaction pathway was assessed by adding CO as a gas phase radical scavenger showing that
·
OH
is essential for conversion of the gas phase NO and NO
2
into water soluble
NO
2
-
and
NO
3
-
. Conversely, atomic oxygen originating from water is likely responsible for NO and NO
2
generation. Experiments with N
2
/O
2
/Ar mixtures and air showed a significant increase in NO
2
production caused by the additional generation of reactive oxygen species. An overall energy yield for all nitrogen oxides produced in the most efficient case was 50 eV/molecule. |
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ISSN: | 0272-4324 1572-8986 |
DOI: | 10.1007/s11090-019-09981-w |