23‐1: Distinguished Paper: 5291 ppi Organic Light Emitting Diode Display using Field‐effect Transistors Including a C‐Axis Aligned Crystalline Oxide Semiconductor
C‐axis aligned crystalline oxide semiconductor field‐effect transistor (CAAC‐OS FET) can be scaled down to a width and length of 60 nm. We have fabricated an organic light‐emitting diode (OLED) display with more than 5000 ppi, which is required in virtual reality (VR) displays, by using CAAC‐OS FETs...
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| Veröffentlicht in: | SID International Symposium Digest of technical papers 2019-06, Vol.50 (1), p.311-314 |
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| container_title | SID International Symposium Digest of technical papers |
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| creator | Katsui, Shuichi Kobayashi, Hidetomo Nakagawa, Takashi Tamatsukuri, Yuki Shishido, Hideaki Uesaka, Shogo Yamaoka, Ryohei Nagata, Takaaki Aoyama, Tomoya Nei, Kosei Okazaki, Yutaka Ikeda, Takayuki Yamazaki, Shunpei |
| description | C‐axis aligned crystalline oxide semiconductor field‐effect transistor (CAAC‐OS FET) can be scaled down to a width and length of 60 nm. We have fabricated an organic light‐emitting diode (OLED) display with more than 5000 ppi, which is required in virtual reality (VR) displays, by using CAAC‐OS FETs as the backplane. |
| doi_str_mv | 10.1002/sdtp.12918 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0097-966X |
| ispartof | SID International Symposium Digest of technical papers, 2019-06, Vol.50 (1), p.311-314 |
| issn | 0097-966X 2168-0159 |
| language | eng |
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| source | Wiley Journals Collection |
| subjects | Backplanes Crystal structure Crystallinity Field effect transistors Organic light emitting diodes Semiconductor devices Virtual reality |
| title | 23‐1: Distinguished Paper: 5291 ppi Organic Light Emitting Diode Display using Field‐effect Transistors Including a C‐Axis Aligned Crystalline Oxide Semiconductor |
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