23‐1: Distinguished Paper: 5291 ppi Organic Light Emitting Diode Display using Field‐effect Transistors Including a C‐Axis Aligned Crystalline Oxide Semiconductor

C‐axis aligned crystalline oxide semiconductor field‐effect transistor (CAAC‐OS FET) can be scaled down to a width and length of 60 nm. We have fabricated an organic light‐emitting diode (OLED) display with more than 5000 ppi, which is required in virtual reality (VR) displays, by using CAAC‐OS FETs...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2019-06, Vol.50 (1), p.311-314
Hauptverfasser:	Katsui, Shuichi, Kobayashi, Hidetomo, Nakagawa, Takashi, Tamatsukuri, Yuki, Shishido, Hideaki, Uesaka, Shogo, Yamaoka, Ryohei, Nagata, Takaaki, Aoyama, Tomoya, Nei, Kosei, Okazaki, Yutaka, Ikeda, Takayuki, Yamazaki, Shunpei
Format:	Artikel
Sprache:	eng
Schlagworte:	Backplanes Crystal structure Crystallinity Field effect transistors Organic light emitting diodes Semiconductor devices Virtual reality
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	C‐axis aligned crystalline oxide semiconductor field‐effect transistor (CAAC‐OS FET) can be scaled down to a width and length of 60 nm. We have fabricated an organic light‐emitting diode (OLED) display with more than 5000 ppi, which is required in virtual reality (VR) displays, by using CAAC‐OS FETs as the backplane.
ISSN:	0097-966X 2168-0159
DOI:	10.1002/sdtp.12918