16‐1: The role of hydrogen and surface potential in the performance and stability of poly‐Si TFTs on plastic substrates

In this work, we report that H in poly‐Si and surface potential in channel play a critical role in the performance and stability of LTPS TFTs. We increased H contents in poly‐Si film from 0.059 to 0.061 atom% resulting in the decrease of the fast state trap density from 4.9~5.8 × 1010/cm2 to 3.6~4.6 × 1010/cm2. Also, we increased surface potential by applying the appropriate back gate bias in TFTs, resulting in the more reduction of effective trap state density down to 1.7~2.0 × 1010/cm2. This resulted in the increase of the field effect mobility up to 115.4cm2/V·sec and decrease of hysteresis below 0.1V. We implemented these technologies into our flexible AMOLED panel.