Enhancement of electro-optical and dielectric properties of CdSeS/ZnS semiconductor quantum-dot-doped nematic liquid crystals in the presence of UV-illumination effect

In this study, we have investigated ultraviolet (UV) illumination effect on electro-optical and dielectric properties of varying concentration of CdSeS/ZnS semiconductor quantum-dot-doped 5CB nematic liquid crystal. Dielectric measurements were made from 10 kHz to 10 MHz frequency ranges in dark and under UV-illumination conditions. Electro-optical measurements were also performed with a voltage-dependence light transmission system at 10 kHz frequency in dark and under UV-illumination conditions. Significant physical parameters such as relaxation frequency ( f R ), real and imaginary components of complex dielectric permittivity ( ε ′ and ε ′′), and threshold voltage ( V th ) values were obtained from experimental results. Results show that UV-illumination effects cause considerable improvements on electro-optical and dielectric characteristic of investigated samples.