Low Defect Thick Homoepitaxial Layers Grown on 4H-SiC Wafers for 6500 V JBS Devices

70-um thick homoepitaxial layers with very low defect density were grown on 6-inch 4° off-axis wafers using hot-wall chemical vapor deposition (CVD). Process optimization resulted in reduction of the density of triangular defects from 1.01 cm-2 to 0.14 cm-2. The treatment of wafer (CMP or selection)...

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Veröffentlicht in:Materials science forum 2019-05, Vol.954, p.114-120
Hauptverfasser: Zhang, Wen Ting, Zhang, Xin He, Yang, Fei, Niu, Ying Xi, Zheng, Liu, Kong, Ling Yi, Tang, Xiao Yan, Jia, Ren Xu, Zhang, Yu Ming, Tian, Li Xin, Hu, Ji Chao
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Sprache:eng
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Zusammenfassung:70-um thick homoepitaxial layers with very low defect density were grown on 6-inch 4° off-axis wafers using hot-wall chemical vapor deposition (CVD). Process optimization resulted in reduction of the density of triangular defects from 1.01 cm-2 to 0.14 cm-2. The treatment of wafer (CMP or selection) was essential. The in-situ etch process was optimized prior to the epitaxial growth. Junction Barrier Schottky diodes fabricated on the epitaxial films presented a typical I–V characteristic and a block voltage of 6500 V.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.954.114