Temperature and bias anomalies in the photoluminescence of InAs quantum dots coupled to a Fermi reservoir

We present anomalous behavior of temperature-dependent photoluminescence (PL) measurements on InAs quantum dot ensembles coupled to an electron reservoir in an n−i−p diode structure. When negative gate voltages are applied to the sample, an anomalous initial increase of the integrated PL signal with rising temperature is observed for the ground-state and first-excited-state emission peaks. In contrast, measurements at positive gate voltages show no such anomaly and are well described by the commonly used Arrhenius model. Unlike previous studies on uncoupled quantum dot ensembles, we show that in quantum dot diode structures the anomalous temperature dependence and its dependence on the applied bias voltage is dominated by electrons tunneling from the electron reservoir to the quantum dots. Tunneling electrons enhance the PL signal by recombining with holes stored in the quantum dots and the tunneling rate depends on temperature via the Fermi distribution in the electron reservoir. With the implementation of a rate-based tunnel coupling, we develop a modified Arrhenius model that takes the observed anomalies excellently into account. Gate voltage dependent PL measurements at 77 K are further compared to capacitance-voltage spectroscopy measurements on the same sample, supporting the proposed interpretation. The PL peak width shows a characteristic evolution as a function of temperature, which is discussed qualitatively in terms of our model.