W-band CMOS direct injection-locked frequency divider with 23.5-GHz locking range using distributed LC network and power matching and body bias techniques

A low power and wide locking-range W-band (75–110 GHz) divide-by-2 direct injection-locked frequency-divider (DILFD) using standard 90 nm CMOS technology is reported. To enhance the operation frequency, distributed LC network is used as the load of the crossed-coupled transistors. To improve the input sensitivity, a power matching network is included at the injection terminal of the switch transistor. In addition, to enhance the frequency locking range, body bias technique (i.e. a body resistor in conjunction with a zero body-source bias) is adopted in the switch transistor to reduce its threshold voltage. The result shows that a wide locking-range of 23.5 GHz [from 69.5 to 93 GHz (28.9%)], covering the 77–81-GHz-band for short range automotive radar system and 81–86-GHz-band for high-speed point-to-point wireless communication access system, was achieved. The DILFD can be operated at a low input power of − 35 dBm, one of the best input sensitivity ever reported for a W-band CMOS divider. The power consumption of the DILFD was only 3 mW from a 0.7 V power supply. The chip area was only 0.76 × 0.66 mm 2 excluding the test pads.