Development of InAs/InAsSb Type II Strained-Layer Superlattice Unipolar Barrier Infrared Detectors

Development of InAs/InAsSb Type II Strained-Layer Superlattice Unipolar Barrier Infrared Detectors

We recently reported mid-wavelength infrared (MWIR) InAs/InAsSb type II strained-layer superlattice (T2SLS) unipolar barrier detectors and focal-plane arrays with significantly higher operating temperature than InSb. Herein, we document the development leading to the MWIR InAs/InAsSb T2SLS detectors...

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Veröffentlicht in:Journal of electronic materials 2019-10, Vol.48 (10), p.6145-6151
Hauptverfasser: Ting, David Z., Soibel, Alexander, Khoshakhlagh, Arezou, Keo, Sam A., Rafol, Sir B., Höglund, Linda, Luong, Edward M., Fisher, Anita M., Hill, Cory J., Gunapala, Sarath D.
Format: Artikel
Sprache:eng
Schlagworte:
Aerospace industry
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electronics and Microelectronics
Infrared detectors
Instrumentation
Materials Science
Operating temperature
Optical and Electronic Materials
Sensors
Solid State Physics
Superlattices
U.S. Workshop on Physics and Chemistry of II-VI Materials 2018
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Zusammenfassung:We recently reported mid-wavelength infrared (MWIR) InAs/InAsSb type II strained-layer superlattice (T2SLS) unipolar barrier detectors and focal-plane arrays with significantly higher operating temperature than InSb. Herein, we document the development leading to the MWIR InAs/InAsSb T2SLS detectors at the NASA Jet Propulsion Laboratory. We also briefly compare the InAs/InAsSb T2SLS with some other approaches.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-019-07255-x