Evolution of microstructure and hardness in Hf25Nb25Ti25Zr25 high-entropy alloy during high-pressure torsion
A four-component equimolar high-entropy alloy (HEA) with the composition of HfNbTiZr and body-centered cubic (bcc) structure was processed by HPT at RT. The evolution of the dislocation density, the grain size and the hardness was monitored along the HPT-processed disk radius for different numbers o...
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Veröffentlicht in: | Journal of alloys and compounds 2019-06, Vol.788, p.318-328 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A four-component equimolar high-entropy alloy (HEA) with the composition of HfNbTiZr and body-centered cubic (bcc) structure was processed by HPT at RT. The evolution of the dislocation density, the grain size and the hardness was monitored along the HPT-processed disk radius for different numbers of turns between ¼ and 20. It was found that most of the increase of the dislocation density and the refinement of the grain structure occurred up to the shear strain of ∼40. Between the strains of ∼40 and ∼700, only a slight grain size reduction was observed. The saturated dislocation density and grain size were ∼2.1 × 1016 m−2 and ∼30 nm, respectively. The saturation in hardness was obtained at ∼4450 MPa. These values were similar to the parameters determined in the literature for five-component HEAs processed by HPT. The analysis confirmed that the main component in the strength was given by the friction stress in the HPT-processed bcc HfNbTiZr HEA. It was also revealed that the contribution of the high dislocation density to the strength was significantly higher than the effect of the small grain size.
•The microstructure and the hardness of a HPT processed HfNbTiZr HEA were studied.•The dislocation density increased to 210 × 1014 m−2 at the shear strain of ∼40.•The minimum grain size of 28 nm was achieved at the shear strain of ∼400.•The saturation hardness was 4450 MPa.•Most of the hardening (60–90%) was caused by the friction stress. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2019.02.220 |