Pt-doped Ni-silicide films formed by pulsed-laser annealing: Microstructural evolution and thermally robust Ni1-xPtxSi2 formation

Pulsed-laser annealing (PLA) was performed on a preformed Pt-doped Ni-rich silicide film (Ni2Si phase), and its microstructural and phase evolution were studied from submelting to melting condition by varying the laser power density (P). Vertically nonuniform compositional profile with an interfacia...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of alloys and compounds 2019-06, Vol.788, p.1013-1020
Hauptverfasser:	Kim, Jinbum, Shin, Ilgyou, Park, Taejin, Kim, Jinyong, Choi, Seongheum, Lee, Sungho, Hong, Seongpyo, Lee, Hyung-Ik, Won, Jung Yeon, Kim, Taegon, Kim, Yihwan, Hwang, Kihyun, Lee, Hoo-Jeong, Kim, Hyoungsub
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Atomic properties Composition Diffusion Epitaxial growth Evolution Intermetallic compounds Laser beam annealing Lasers Melting Microstructure Nickel silicide Nucleation Phase Platinum Pulsed laser annealing Pulsed lasers Silicon substrates Thermal stability
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!