Pt-doped Ni-silicide films formed by pulsed-laser annealing: Microstructural evolution and thermally robust Ni1-xPtxSi2 formation

Pulsed-laser annealing (PLA) was performed on a preformed Pt-doped Ni-rich silicide film (Ni2Si phase), and its microstructural and phase evolution were studied from submelting to melting condition by varying the laser power density (P). Vertically nonuniform compositional profile with an interfacia...

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Veröffentlicht in:	Journal of alloys and compounds 2019-06, Vol.788, p.1013-1020
Hauptverfasser:	Kim, Jinbum, Shin, Ilgyou, Park, Taejin, Kim, Jinyong, Choi, Seongheum, Lee, Sungho, Hong, Seongpyo, Lee, Hyung-Ik, Won, Jung Yeon, Kim, Taegon, Kim, Yihwan, Hwang, Kihyun, Lee, Hoo-Jeong, Kim, Hyoungsub
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Atomic properties Composition Diffusion Epitaxial growth Evolution Intermetallic compounds Laser beam annealing Lasers Melting Microstructure Nickel silicide Nucleation Phase Platinum Pulsed laser annealing Pulsed lasers Silicon substrates Thermal stability
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Zusammenfassung:	Pulsed-laser annealing (PLA) was performed on a preformed Pt-doped Ni-rich silicide film (Ni2Si phase), and its microstructural and phase evolution were studied from submelting to melting condition by varying the laser power density (P). Vertically nonuniform compositional profile with an interfacial intermixing was observed under a solid state reaction regime (P
ISSN:	0925-8388 1873-4669
DOI:	10.1016/j.jallcom.2019.02.307