Simple non-galvanic flip-chip integration method for hybrid quantum systems

A challenge faced by experimenters exploring hybrid quantum systems is how to integrate and interconnect different materials and different substrates in a quantum-coherent fashion. Here, we present a simple and inexpensive flip-chip bonding process, suitable for integrating hybrid quantum devices on...

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Veröffentlicht in:Applied physics letters 2019-04, Vol.114 (17)
Hauptverfasser: Satzinger, K. J., Conner, C. R., Bienfait, A., Chang, H.-S., Chou, Ming-Han, Cleland, A. Y., Dumur, É., Grebel, J., Peairs, G. A., Povey, R. G., Whiteley, S. J., Zhong, Y. P., Awschalom, D. D., Schuster, D. I., Cleland, A. N.
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Sprache:eng
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Zusammenfassung:A challenge faced by experimenters exploring hybrid quantum systems is how to integrate and interconnect different materials and different substrates in a quantum-coherent fashion. Here, we present a simple and inexpensive flip-chip bonding process, suitable for integrating hybrid quantum devices on chips from different substrates. The process only requires equipment and materials used routinely for contact photolithography, and it is possible to undo the bonding and reuse the chips. The technique requires minimal compressive force, so it is compatible with a wide range of different substrates. Unlike indium-based bonding, this process does not establish a galvanic connection between the two chips, but as we show, in some situations this is not necessary. We demonstrate the technique using lithographically patterned quarter-wave coplanar waveguide resonators, fabricated on one chip, and couple these inductively to a transmission line patterned lithographically on a separate chip. The two chips have a vertical interchip gap of about 7 μm, and we can repeatedly achieve lateral alignments of better than 2 μm. We measure electromagnetic resonances with low-power (∼1 photon) internal quality factors Qi around 5 × 105, comparable to single-chip performances, with as-designed coupling quality factors Qc ranging from 2 × 102 to 5 × 105.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5089888