Determination of atomic boron concentration in heavily boron-doped diamond by Raman spectroscopy

Raman spectroscopy has been foreseen as a simple and non-destructive characterization method to determine the boron concentration in heavily boron-doped diamond with metallic conductivity. However, currently available empirical studies are not fully satisfactory for enabling accurate determination of the boron concentration in diamond. Here, we study Raman spectra of epitaxial boron-doped diamond as a function of the boron concentration and the excitation wavelength. The zone center phonon and the phonon density of state maximum (at ca. 1200 cm−1) lines are analyzed using a decoupled double Fano-function. This analysis method accurately describes the observed variation of the asymmetric parameters with atomic boron concentration and the photon excitation energy and enables the determination of the atomic boron concentration from the parameters of the examined Raman lines. [Display omitted] •Raman spectrum of highly boron-doped diamond are fitted between 1000 and 1500 cm-1 using a double Fano-function formalism•The dispersion of the asymmetric parameter of both Raman peaks with the boron concentration and the excitation wavelength is reported•Proportionality between the atomic boron concentration in diamond and the position and the width of the undisturbed Raman peaks is demonstrated