Microstructure tailoring of high thermal conductive silicon nitride through addition of nuclei with spark plasma sintering and post-sintering heat treatment

High thermal conductive β-silicon nitride (β-Si3N4) ceramics were fabricated from fine α-Si3N4 powder as the raw material and coarse β-Si3N4 particles as the nuclei through spark plasma sintering (SPS) at 1650 °C for 5 min and post-sintering heat treatment at 1900 °C for 4 h. The microstructures of...

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Veröffentlicht in:Journal of alloys and compounds 2019-05, Vol.785, p.89-95
Hauptverfasser: Yang, Chunping, Ding, Junjie, Ma, Jie, Zhang, Biao, Ye, Feng, Wu, Yiyong, Liu, Qiang
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Sprache:eng
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Zusammenfassung:High thermal conductive β-silicon nitride (β-Si3N4) ceramics were fabricated from fine α-Si3N4 powder as the raw material and coarse β-Si3N4 particles as the nuclei through spark plasma sintering (SPS) at 1650 °C for 5 min and post-sintering heat treatment at 1900 °C for 4 h. The microstructures of the sintered β-Si3N4 ceramics could be tailored with the nuclei. The mean sizes and frequencies of large grains increased and consequently decreased as the increased amount of coarse β-Si3N4 particles increased. The thermal conductivity of the sample with 10 mol% of β-Si3N4 nuclei reached a maximum value of 84.6 W m−1 K−1. These results revealed that the thermal conductivity of β-Si3N4 ceramics was independent of the grain size and controlled by the amount of reprecipitated large grains. [Display omitted] •Thermal conductivity of β-Si3N4 ceramics can be tailored through controlled microstructure.•Microstructure of β-Si3N4 ceramics is controlled by adding β-Si3N4 seeding.•Thermal conductivity is related to frequencies of large grains.•The maximum thermal conductivity value reached 84.6 W m−1 K−1.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2018.12.204