Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films

•Discovery of electron-diffuson scattering contribution to anomalous Hall effect (AHE).•Only in disordered ferromagnets (FMs) does the weak localization contribute to AHE.•Electron-electron interaction effects do not contribute to AHE in crystalline FMs.•A universal scaling holds between AHE and temperature-dependent part of resistivity. An exhaustive study of the influence of disorder on anomalous Hall (AH) resistivity (ρxyAH), longitudinal resistivity (ρxx), magnetoresistance and magnetization of Co2FeSi (CFS) Heusler alloy thin films of fixed (50 nm) thickness, deposited on Si (111) substrate, reveals the following. Regardless of the degree of disorder present, the side-jump mechanism gives a dominant contribution to ρxyAH. A new and novel contribution to both ρxx and ρxyAH, characterized by the logarithmic temperature (-lnT) dependence at temperatures below the minimum (T